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doi:10.22028/D291-24008
Title: | Stickstoffverbindungen von Elementen der dritten Hauptgruppe mit intra- und intermolekularen Donor-Akzeptor-Bindungen. - V : Spezielle Gallium- und Indium-amide mit Alkoxogruppen |
Author(s): | Veith, Michael Pöhlmann, Jürgen |
Language: | German |
Year of Publication: | 1988 |
OPUS Source: | Zeitschrift für Naturforschung / B. - 43. 1988, S. 505-512 |
SWD key words: | Indium Gallium Amide Borgruppe Element Stickstoffverbindungen |
DDC notations: | 540 Chemistry |
Publikation type: | Journal Article |
Abstract: | The lithium alkoxoamidosilane (Me2Si(OtBu)(NtBu)2 (4) and its trimethyltin derivative Me2Si(OtBu)(NtBu)SnMe3 (7) have been used, to introduce the ligand Me2Si(Otbu)(NtBu) = L into molecular compounds of gallium and indium. The following molecules were synthesized : L-M(Me)Cl (M = Ga(5), In (6)), L-InMe2 (8); L-InX2 (X = Cl (9), Br(10)), L2InX (X = Cl of temperature dependent 1H NmR spectra. the chelating effect is more pronounced in the gallium derivatives than in the indium analogues. Equilibria between L2InX/InX3 and LInx2 have bee observed in diethylether solutions. No metal(I) deribatibes LGa or LIn could be isolated. L2Ga2Cl2 (22), formally containing gallium(II), can be sublimed without decomposition at 110°C in vacuo. |
Link to this record: | urn:nbn:de:bsz:291-scidok-20381 hdl:20.500.11880/24064 http://dx.doi.org/10.22028/D291-24008 |
Date of registration: | 5-Feb-2009 |
Faculty: | SE - Sonstige Einrichtungen |
Department: | SE - INM Leibniz-Institut für Neue Materialien NT - Chemie |
Collections: | INM SciDok - Der Wissenschaftsserver der Universität des Saarlandes |
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ve198812.pdf | 3,75 MB | Adobe PDF | View/Open |
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