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Eintrag in der Jahresbibliographie der Hochschulen des Saarlandes


Filleter, Tobin ; Emtsev, K. V. ; Seyller, T. H. ; Bennewitz, Roland

Local work function measurements of epitaxial graphene



Kurzfassung in englisch

The work function difference between single layer and bilayer graphene grown epitaxially on 6//-SiC(0001) has been determined to be 135 ±9 meV by means of the Kelvin probe force microscopy. Bilayer films are found to increase the work function as compared to single layer films. This method allows an unambiguous distinction between interface layer, single layer, and bilayer graphene. In combination with high-resolution topographic imaging, the complex step structure of epitaxial graphene on SiC can be resolved with respect to substrate and graphene layer steps

Hochschule: Universität des Saarlandes
Institut: Leibniz Institut für neue Materialien gem. GmbH (INM)
Dokumentart: Artikel in Fachzeitschrift (print oder online), peer-reviewed
Quelle: In: Applied physics letters. - 93. 2008, 13, 133117, 1-3

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